P16N25 fqp16n25 equivalent, fqp16n25.
* 16 A, 250 V, RDS(on) = 230 mΩ (Max.) @ VGS = 10 V, ID = 8.0 A
* Low Gate Charge (Typ. 27 nC)
* Low Crss (Typ. 23 pF)
* 100% Avalanche Tested
D
GDS
TO.
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.
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